| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
2SB833 |
Silicon PNP triple diffused darlington power, high current switching transistor |
TOSHIBA |
| 3212 |
2SB892 |
PNP Epitaxial Planar Silicon Darlington Transistors Large-Current Switching Applications |
SANYO |
| 3213 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 3214 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 3215 |
2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 3216 |
2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 3217 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 3218 |
2SB920 |
80V/5A Switching Applications |
SANYO |
| 3219 |
2SB920L |
PNP Epitaxial Planar Silicon Transistors 80V/5A Switching Applications |
SANYO |
| 3220 |
2SB921 |
80V/7A Switching Applications |
SANYO |
| 3221 |
2SB921L |
PNP Epitaxial Planar Silicon Transistors 80V/7A Switching Applications |
SANYO |
| 3222 |
2SB922L |
PNP Epitaxial Planar Silicon Transistors 80V/12A Switching Applications |
SANYO |
| 3223 |
2SB935 |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
| 3224 |
2SB935A |
Silicon PNP epitaxial planar type(For low-voltage switching) |
Panasonic |
| 3225 |
2SB943 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
| 3226 |
2SB955 |
Transistors>Switching/Bipolar |
Renesas |
| 3227 |
2SB986 |
PNP Epitaxial Planar Silicon Darlington Transistors 50V/4A Switching Applications |
SANYO |
| 3228 |
2SB992 |
Silicon PNP triple diffused high current switching power transistor, complementary to 2SD1362 |
TOSHIBA |
| 3229 |
2SB993 |
Silicon PNP triple diffused high current switching power transistor |
TOSHIBA |
| 3230 |
2SB997 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 3231 |
2SB998 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 3232 |
2SB999 |
Silicon PNP triple diffused darlington power switching transistor |
TOSHIBA |
| 3233 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 3234 |
2SC101 |
High Power Switching Transistor |
TOSHIBA |
| 3235 |
2SC102 |
High Power Switching Transistor |
TOSHIBA |
| 3236 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 3237 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 3238 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 3239 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 3240 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
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