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Datasheets for V,

Datasheets found :: 72731
Page: | 1070 | 1071 | 1072 | 1073 | 1074 | 1075 | 1076 | 1077 | 1078 |
No. Part Name Description Manufacturer
32191 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
32192 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
32193 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
32194 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
32195 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
32196 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
32197 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
32198 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
32199 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
32200 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
32201 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
32202 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
32203 KM416C1204CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
32204 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
32205 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
32206 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
32207 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
32208 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
32209 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
32210 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
32211 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
32212 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
32213 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
32214 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
32215 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
32216 KM416C254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
32217 KM416C254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
32218 KM416C254DJL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
32219 KM416C254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
32220 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic


Datasheets found :: 72731
Page: | 1070 | 1071 | 1072 | 1073 | 1074 | 1075 | 1076 | 1077 | 1078 |



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