| No. |
Part Name |
Description |
Manufacturer |
| 3241 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 3242 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 3243 |
2SC5414 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3244 |
2SC5415 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3245 |
2SC5419 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 3246 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3247 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3248 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3249 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3250 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3251 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3252 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3253 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3254 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3255 |
2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3256 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3257 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3258 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3259 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3260 |
2SC5463 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3261 |
2SC5464 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3262 |
2SC5464FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3263 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3264 |
2SC547 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power Driver applications |
TOSHIBA |
| 3265 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 3266 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 3267 |
2SC5488 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3268 |
2SC5489 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3269 |
2SC549 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power driver applications |
TOSHIBA |
| 3270 |
2SC5490 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
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