| No. |
Part Name |
Description |
Manufacturer |
| 3241 |
SSM6N09FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications |
TOSHIBA |
| 3242 |
SSM6N15FU |
High Speed Switching Applications Analog Switching Applications |
TOSHIBA |
| 3243 |
SSM6N16FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 3244 |
SSM6N16FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 3245 |
SSM6N17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 3246 |
SSM6P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications |
TOSHIBA |
| 3247 |
SSM6P09FU |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications |
TOSHIBA |
| 3248 |
TA7238 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
| 3249 |
TH3J10 |
High Voltage / High Speed Switching Transistors |
Shindengen |
| 3250 |
TH3L10 |
High Voltage / High Speed Switching Transistors |
Shindengen |
| 3251 |
TIP120 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 3252 |
TIP121 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 3253 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 3254 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 3255 |
TIP125 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 3256 |
TIP126 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 3257 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 3258 |
TPC6501 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
TOSHIBA |
| 3259 |
TPC6502 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3260 |
TPC6503 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3261 |
TPC6601 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 3262 |
TPC6602 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
TOSHIBA |
| 3263 |
TPC6603 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3264 |
TPC6604 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3265 |
TPC6701 |
Multi-Chip Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications Motor Drive Applications Inverter Lighting Applications |
TOSHIBA |
| 3266 |
TPC6901A |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3267 |
TPC6902 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3268 |
TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 3269 |
TPCP8501 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 3270 |
TPCP8504 |
Power transistor for high-speed switching applications |
TOSHIBA |
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