| No. |
Part Name |
Description |
Manufacturer |
| 3271 |
1M130Z |
130 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3272 |
1M150Z |
150 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3273 |
1M150Z |
150 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3274 |
1M160Z |
160 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3275 |
1M160Z |
160 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3276 |
1M180Z |
180 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3277 |
1M180Z |
180 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3278 |
1M200Z |
200 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3279 |
1M200Z |
200 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3280 |
1MBI200F-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 3281 |
1MBI200L-120 |
IGBT module for motor drive inverter, AC and DC servo drive amplifier applications |
COLLMER SEMICONDUCTOR INC |
| 3282 |
1N100 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3283 |
1N100 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3284 |
1N100A |
100 V, 250 mA, gold bonded germanium diode |
BKC International Electronics |
| 3285 |
1N100A |
100 V, 250 mA, gold bonded germanium diode |
BKC International Electronics |
| 3286 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3287 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3288 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3289 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3290 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3291 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3292 |
1N105 |
Silicon Microwave Switch BV=500V, PD=8.0W |
Motorola |
| 3293 |
1N107 |
10 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3294 |
1N107 |
10 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3295 |
1N108 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3296 |
1N108 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 3297 |
1N1095 |
Rectifier Diode, Replacement 1N4005 |
Motorola |
| 3298 |
1N1095 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 3299 |
1N1095 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 3300 |
1N1096 |
Rectifier Diode, Replacement 1N4005 |
Motorola |
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