No. |
Part Name |
Description |
Manufacturer |
3271 |
KBPC1002 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
3272 |
KBPC102 |
200 V, 3 A single-phase silicon bridge rectifier |
Invac |
3273 |
KBPC1502 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
3274 |
KBPC1502 |
200 V, 15 A single-phase silicon bridge rectifier |
Invac |
3275 |
KBPC1502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
3276 |
KBPC2502 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
3277 |
KBPC2502 |
200 V, 25 A single-phase silicon bridge rectifier |
Invac |
3278 |
KBPC2502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
3279 |
KBPC3502 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
3280 |
KBPC3502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
3281 |
KBPC5002 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
3282 |
KBPC602 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
3283 |
KBPC602 |
200 V, 6 A single-phase silicon bridge rectifier |
Invac |
3284 |
KBPC802 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
3285 |
KBPC802 |
200 V, 6 A single-phase silicon bridge |
Honey Technology |
3286 |
KBPC802 |
200 V, 8 A single-phase silicon bridge rectifier |
Invac |
3287 |
KD421210A7 |
Dual Darlington Transistor Module (100 Amperes/1200 Volts) |
Powerex Power Semiconductors |
3288 |
KD421A20 |
Fast Switching Dual Darlington Transistor Module (200 Amperes/125 Volts) |
Powerex Power Semiconductors |
3289 |
KD424520 |
Dual Darlington Transistor Module (200 Amperes/600 Volts) |
Powerex Power Semiconductors |
3290 |
KD621220 |
DUAL DARLINGTON TRANSISTOR MODULE 200 AMPERES/1200 VOLTS |
Powerex Power Semiconductors |
3291 |
KD621220 |
DUAL DARLINGTON TRANSISTOR MODULE 200 AMPERES/1200 VOLTS |
Powerex Power Semiconductors |
3292 |
KD7212A2 |
Dual Darlington Transistor Module (25 Amperes/1200 Volts) |
Powerex Power Semiconductors |
3293 |
KS0312A0 |
Base Drive Transistor Module (5 Amperes/1200 Volts) |
Powerex Power Semiconductors |
3294 |
KS324520 |
Single Darlington Transistor Module (200 Amperes/600 Volts) |
Powerex Power Semiconductors |
3295 |
KS621220A7 |
Single Darlington Transistor Module (200 Amperes/1200 Volts) |
Powerex Power Semiconductors |
3296 |
KS621220A7 |
Single Darlington Transistor Module (200 Amperes/1200 Volts) |
Powerex Power Semiconductors |
3297 |
KS621240 |
Single Darlington Transistor Module 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
3298 |
KS621K20 |
Single Darlington Transistor Module (200 Amperes/1000 Volts) |
Powerex Power Semiconductors |
3299 |
KSC1507 |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
3300 |
KSC1520A |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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