| No. |
Part Name |
Description |
Manufacturer |
| 3271 |
IRF9540STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3272 |
IRF9541 |
60 V, P-channel power MOSFET |
Samsung Electronic |
| 3273 |
IRF9542 |
100 V, P-channel power MOSFET |
Samsung Electronic |
| 3274 |
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3275 |
IRF9610S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3276 |
IRF9610STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3277 |
IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3278 |
IRF9620 |
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 3279 |
IRF9620 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3280 |
IRF9620 |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET |
Intersil |
| 3281 |
IRF9620 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
| 3282 |
IRF9620S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3283 |
IRF9620STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3284 |
IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3285 |
IRF9621 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
| 3286 |
IRF9622 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3A |
Siliconix |
| 3287 |
IRF9623 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3A |
Siliconix |
| 3288 |
IRF9630 |
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
Fairchild Semiconductor |
| 3289 |
IRF9630 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3290 |
IRF9630 |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 3291 |
IRF9630 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 3292 |
IRF9630 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 6.5A |
Siliconix |
| 3293 |
IRF9630PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3294 |
IRF9630S |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3295 |
IRF9630STRL |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3296 |
IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 3297 |
IRF9631 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 3298 |
IRF9631 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 6.5A |
Siliconix |
| 3299 |
IRF9632 |
200 V, P-channel power MOSFET |
Samsung Electronic |
| 3300 |
IRF9632 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 5.5A |
Siliconix |
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