| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
KU3600N10D |
N-ch Trench MOS FET |
Korea Electronics (KEC) |
| 3302 |
KU3600N10W |
N CHANNEL TRENCH MOS FIELD |
Korea Electronics (KEC) |
| 3303 |
KV1300NT |
VARIABLE CAPACITANCE DIODE |
TOKO |
| 3304 |
L3000N |
Negative battery voltage: -80V; positive battery V.: 80V; total battery V.: 140V; SLIC KIT optimized for applications with both first and secind generation COMBOS |
SGS Thomson Microelectronics |
| 3305 |
L3000NSO |
Negative battery voltage: -80V; positive battery V.: 80V; total battery V.: 140V; SLIC KIT optimized for applications with both first and secind generation COMBOS |
SGS Thomson Microelectronics |
| 3306 |
LA2800N |
Telephone Answering Machine |
SANYO |
| 3307 |
LA4700N |
2-Channel 12W AF Power Amplifier for Car Stereos |
SANYO |
| 3308 |
LA9200NM |
Analog Signal Processors for Compact Disc Players |
SANYO |
| 3309 |
LAN9118 |
HIGH PERFORMANCE SINGLE CHIP 10/100NON PCI ETHERNET CONTROLLER |
SMSC Corporation |
| 3310 |
LAN9118 |
HIGH PERFORMANCE SINGLE CHIP 10/100NON PCI ETHERNET CONTROLLER |
SMSC Corporation |
| 3311 |
LAN9118-MD |
HIGH PERFORMANCE SINGLE CHIP 10/100NON PCI ETHERNET CONTROLLER |
SMSC Corporation |
| 3312 |
LAN9118-MT |
HIGH PERFORMANCE SINGLE CHIP 10/100NON PCI ETHERNET CONTROLLER |
SMSC Corporation |
| 3313 |
LC3517A-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3314 |
LC3517AL-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3315 |
LC3517AM-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3316 |
LC3517AML-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3317 |
LC3517AS-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3318 |
LC3517ASL-10 |
100ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 3319 |
LC3664R-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3320 |
LC3664RL-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3321 |
LC3664RM-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3322 |
LC3664RML-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3323 |
LC3664RS-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3324 |
LC3664RSL-10 |
Access time: 100ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 3325 |
LCR60/TR12 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3326 |
LCR60/TR8 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3327 |
LCR60e3/TR12 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3328 |
LCR60e3/TR8 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3329 |
LDC1000NHRJ |
5V, High Resolution, Inductance to Digital Converter for Inductive Sensing Applications 16-WSON -40 to 125 |
Texas Instruments |
| 3330 |
LDC1000NHRR |
5V, High Resolution, Inductance to Digital Converter for Inductive Sensing Applications 16-WSON -40 to 125 |
Texas Instruments |
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