| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
2SC3606 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3302 |
2SC3607 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3303 |
2SC3610 |
Power Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 3304 |
2SC3613 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE VIDEO DRIVE STAGE IN HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
| 3305 |
2SC3617 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3306 |
2SC3618 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3307 |
2SC3621 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 3308 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3309 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3310 |
2SC3628 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3311 |
2SC3629 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3312 |
2SC3630 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3313 |
2SC3632-Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3314 |
2SC3632Z |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3315 |
2SC3645 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 3316 |
2SC3646 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 3317 |
2SC3647 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 3318 |
2SC3648 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications |
SANYO |
| 3319 |
2SC3649 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 3320 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3321 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3322 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 3323 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3324 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3325 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3326 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3327 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3328 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3329 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3330 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
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