No. |
Part Name |
Description |
Manufacturer |
3301 |
BF256LB |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3302 |
BF256LC |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
3303 |
BF350 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3304 |
BF351 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3305 |
BF352 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3306 |
BF353 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
3307 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3308 |
BF410A |
N-channel silicon field-effect transistors |
Philips |
3309 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3310 |
BF410B |
N-channel silicon field-effect transistors |
Philips |
3311 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3312 |
BF410C |
N-channel silicon field-effect transistors |
Philips |
3313 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3314 |
BF410D |
N-channel silicon field-effect transistors |
Philips |
3315 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
3316 |
BF510 |
N-channel silicon field-effect transistors |
Philips |
3317 |
BF511 |
N-channel silicon field-effect transistors |
Philips |
3318 |
BF512 |
N-channel silicon field-effect transistors |
Philips |
3319 |
BF513 |
N-channel silicon field-effect transistors |
Philips |
3320 |
BF545A |
N-channel silicon junction field-effect transistors |
Philips |
3321 |
BF545B |
N-channel silicon junction field-effect transistors |
Philips |
3322 |
BF545C |
N-channel silicon junction field-effect transistors |
Philips |
3323 |
BF556A |
N-channel silicon junction field-effect transistors |
Philips |
3324 |
BF556B |
N-channel silicon junction field-effect transistors |
Philips |
3325 |
BF556C |
N-channel silicon junction field-effect transistors |
Philips |
3326 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
3327 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
3328 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
3329 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
3330 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
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