| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
| 3302 |
2SD838 |
For Very High Voltage Switching Use |
Unknow |
| 3303 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 3304 |
2SD882 |
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) |
NEC |
| 3305 |
2SD904 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR HORIZONTAL DEFLECTION OUTPUT |
SANYO |
| 3306 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 3307 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 3308 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 3309 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 3310 |
2SD993 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT |
SANYO |
| 3311 |
2SD995 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT WITH HIGH VOLTAGE |
SANYO |
| 3312 |
2SH26 |
Transistors>IGBT>for General use |
Renesas |
| 3313 |
2SH27 |
Transistors>IGBT>for General use |
Renesas |
| 3314 |
2SH28 |
Transistors>IGBT>for General use |
Renesas |
| 3315 |
2SH29 |
Transistors>IGBT>for General use |
Renesas |
| 3316 |
2SH30 |
Transistors>IGBT>for General use |
Renesas |
| 3317 |
2SH31 |
Transistors>IGBT>for General use |
Renesas |
| 3318 |
2SJ103 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 3319 |
2SJ104 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 3320 |
2SJ105 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 3321 |
2SJ107 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
TOSHIBA |
| 3322 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 3323 |
2SJ165 |
P-CHANNEL MOS FET FOR SWITCHING |
NEC |
| 3324 |
2SJ166 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3325 |
2SJ178 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3326 |
2SJ179 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3327 |
2SJ180 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3328 |
2SJ184 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3329 |
2SJ185 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 3330 |
2SJ196 |
P-CHANNEL MOS FET FOR SWITCHING |
NEC |
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