| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3302 |
2SC5432 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3303 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3304 |
2SC5433 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3305 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3306 |
2SC5434 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3307 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3308 |
2SC5435 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3309 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3310 |
2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3311 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3312 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 3313 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 3314 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3315 |
2SC5463 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3316 |
2SC5464 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3317 |
2SC5464FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3318 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 3319 |
2SC547 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power Driver applications |
TOSHIBA |
| 3320 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 3321 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 3322 |
2SC5488 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3323 |
2SC5489 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3324 |
2SC549 |
Silicon NPN epitaxial planar transistor, VHF power amplifier, frequency multiplier and RF power driver applications |
TOSHIBA |
| 3325 |
2SC5490 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
| 3326 |
2SC5501 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3327 |
2SC5502 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3328 |
2SC5503 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 3329 |
2SC5504 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
| 3330 |
2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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