| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
2SC707H |
Silicon NPN Planar Transistor, intended for use in UHF BAND RF Amplifier |
Hitachi Semiconductor |
| 3302 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 3303 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 3304 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 3305 |
2SC717 |
VHF RF AMPLIFIER, MIXER, OSCILLATOR |
Unknow |
| 3306 |
2SC732 |
Silicon NPN epitaxial planar transistor, low noise amplifier applications |
TOSHIBA |
| 3307 |
2SC732TM |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3308 |
2SC733 |
Silicon NPN epitaxial planar transistor, audio amplifier applications |
TOSHIBA |
| 3309 |
2SC734 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications |
TOSHIBA |
| 3310 |
2SC782 |
Silicon NPN triple diffused MESA transistor, audio frequency power amplifier applications |
TOSHIBA |
| 3311 |
2SC783 |
Silicon NPN triple diffused MESA transistor, audio frequency power amplifier applications |
TOSHIBA |
| 3312 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 3313 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 3314 |
2SC787 |
Silicon NPN planar transistor, TV UHF amplifier applications |
TOSHIBA |
| 3315 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 3316 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 3317 |
2SC829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 3318 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 3319 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 3320 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
| 3321 |
2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
USHA India LTD |
| 3322 |
2SC9018 |
AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER |
USHA India LTD |
| 3323 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 3324 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 3325 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 3326 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 3327 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 3328 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 3329 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 3330 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
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