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Datasheets for NICS CO

Datasheets found :: 3424
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |
No. Part Name Description Manufacturer
3301 MC2836 Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3302 MC2837 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. Isahaya Electronics Corporation
3303 MC2838 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3304 MC2839 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. Isahaya Electronics Corporation
3305 MC2840 Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. Isahaya Electronics Corporation
3306 MC2841 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE Isahaya Electronics Corporation
3307 MC2842 MC2842 Isahaya Electronics Corporation
3308 MC2843 MC2843 Isahaya Electronics Corporation
3309 MC2844 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3310 MC2845 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. Isahaya Electronics Corporation
3311 MC2846 Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3312 MC2848 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE Isahaya Electronics Corporation
3313 MC2850 Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. Isahaya Electronics Corporation
3314 MC2852 Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3315 MC2854 Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3316 MC961 Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3317 MC971 For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) Isahaya Electronics Corporation
3318 MC981 Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. Isahaya Electronics Corporation
3319 MC982 Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. Isahaya Electronics Corporation
3320 OPTOELECTRONICS CODE TESLA Optoelectronic code Tesla Elektronicke
3321 RT1N137L Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3322 RT1N137P Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3323 RT1N141C Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3324 RT1N141M Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3325 RT1N141S Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3326 RT1N141T Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3327 RT1N141U Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3328 RT1N431C Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3329 RT1N431M Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation
3330 RT1N431S Transistor with resistor for switching application. Silicon NPN epitaxial type. Isahaya Electronics Corporation


Datasheets found :: 3424
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |



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