| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 3302 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 3303 |
MJE4918 |
3A general-purpose medium-power PNP silicon transistor |
Motorola |
| 3304 |
MJE4919 |
3A general-purpose medium-power PNP silicon transistor |
Motorola |
| 3305 |
MJE4920 |
3A general-purpose medium-power PNP silicon transistor |
Motorola |
| 3306 |
MJE4921 |
3A general-purpose medium-power NPN silicon transistor |
Motorola |
| 3307 |
MJE4922 |
3A general-purpose medium-power NPN silicon transistor |
Motorola |
| 3308 |
MJE4923 |
3A general-purpose medium-power NPN silicon transistor |
Motorola |
| 3309 |
ML675001 |
32-bit ARM-Based General-Purpose Microcontroller |
OKI electronic componets |
| 3310 |
ML67Q5002 |
32-bit ARM-Based General-Purpose Microcontroller |
OKI electronic componets |
| 3311 |
ML67Q5003 |
32-bit ARM-Based General-Purpose Microcontroller |
OKI electronic componets |
| 3312 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
| 3313 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
| 3314 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
| 3315 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
| 3316 |
MM4000 |
High-voltage PNP silicon annular transistor for use in general-purpose, high-voltage applications |
Motorola |
| 3317 |
MM4001 |
High-voltage PNP silicon annular transistor for use in general-purpose, high-voltage applications |
Motorola |
| 3318 |
MM4002 |
High-voltage PNP silicon annular transistor for use in general-purpose, high-voltage applications |
Motorola |
| 3319 |
MM4003 |
High-voltage PNP silicon annular transistor for use in general-purpose, high-voltage applications |
Motorola |
| 3320 |
MMD6050 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 3321 |
MMD6100 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 3322 |
MMD6150 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 3323 |
MMD7000 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 3324 |
MPQ2221 |
Quad Dual-In-Line NPN Silicon General-Purpose Transistors |
Motorola |
| 3325 |
MPQ2222 |
Quad Dual-In-Line NPN Silicon General-Purpose Transistors |
Motorola |
| 3326 |
MWA5121 |
30-890MHz WIDEBAND general-purpose hybrid amplifier |
Motorola |
| 3327 |
MWA5157 |
30-890MHz WIDEBAND general-purpose hybrid amplifier |
Motorola |
| 3328 |
NE4558 |
Dual general-purpose operational amplifier |
Philips |
| 3329 |
NE4558D |
Dual general-purpose operational amplifier |
Philips |
| 3330 |
NE4558N |
Dual general-purpose operational amplifier |
Philips |
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