DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SSI

Datasheets found :: 55709
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |
No. Part Name Description Manufacturer
3301 3KP90A GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts Surge Components
3302 3KP90C GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts Surge Components
3303 3KP90CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 3000 Watt Peak Pulse Power) Panjit International Inc
3304 3KP90CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 to 170 Volts Surge Components
3305 3LP01M P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP ON Semiconductor
3306 3N140 N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor Motorola
3307 3N155 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
3308 3N155A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
3309 3N156 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
3310 3N156A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
3311 3N157 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
3312 3N157A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
3313 3N158 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
3314 3N158A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
3315 3N246 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3316 3N246 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3317 3N247 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3318 3N247 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3319 3N248 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3320 3N248 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3321 3N249 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3322 3N249 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3323 3N250 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3324 3N250 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3325 3N251 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3326 3N251 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3327 3N252 GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE General Semiconductor
3328 3N252 Glass Passivated Single-Phase Bridge Rectifiers, Forward Current 1.5A Vishay
3329 3N253 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER General Semiconductor
3330 3N253 50 V, 2 A, in-line glass passivated single phase rectifier bridge TRANSYS Electronics Limited


Datasheets found :: 55709
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |



© 2024 - www Datasheet Catalog com