No. |
Part Name |
Description |
Manufacturer |
3301 |
BC308 |
Silicon p-n-p low power transistor |
Mullard |
3302 |
BC309 |
Silicon p-n-p low power transistor |
Mullard |
3303 |
BC327 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
3304 |
BC328 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
3305 |
BC337 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
3306 |
BC338 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
3307 |
BC413 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
3308 |
BC414 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
3309 |
BC415 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
3310 |
BC416 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
3311 |
BCM6410 |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION |
Broadcom |
3312 |
BCM6410IPB |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION |
Broadcom |
3313 |
BCM6420 |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION |
Broadcom |
3314 |
BCM6420IPB |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION |
Broadcom |
3315 |
BCM6420IPB |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION |
Broadcom |
3316 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3317 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
3318 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3319 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
3320 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3321 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3322 |
BCR2PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3323 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3324 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3325 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3326 |
BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
3327 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3328 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3329 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
3330 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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