| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
2N6107 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
| 3302 |
2N6107 |
SILICON PNP SWITCHING TRANSISTORS |
ST Microelectronics |
| 3303 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 3304 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 3305 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 3306 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
| 3307 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
SGS Thomson Microelectronics |
| 3308 |
2N6111 |
SILICON PNP SWITCHING TRANSISTORS |
ST Microelectronics |
| 3309 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3310 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3311 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3312 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3313 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3314 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3315 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3316 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3317 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3318 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3319 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 3320 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 3321 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 3322 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 3323 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 3324 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 3325 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 3326 |
2N6473 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
| 3327 |
2N6474 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
| 3328 |
2N6475 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
| 3329 |
2N6476 |
COMPLEMENTARY SILICON SWITCHING TRANSITORS |
Central Semiconductor |
| 3330 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| | | |
