| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 332 |
1S419 |
Diffused silicon rectifier 3A 1000V |
Texas Instruments |
| 333 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 334 |
1U1 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 335 |
1U2 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 336 |
1U3 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 337 |
1U4 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 338 |
1U5 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 339 |
1U6 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 340 |
1U7 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 341 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
| 342 |
2020-1000 |
Delay 1000 +/-20 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 343 |
2075-1000 |
Delay 1000 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 344 |
20RIF100W |
V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 345 |
20SI10 |
20A 1000V Silicon Rectifier Diode |
IPRS Baneasa |
| 346 |
20SI10R |
20A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 347 |
250JB10L |
V(rrm): 1000V; 25A rectifier bridge |
International Rectifier |
| 348 |
25NC12 |
Silicon diffused junction rectifier 25A 1000V |
TOSHIBA |
| 349 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 350 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
| 351 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 352 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 353 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 354 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 355 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 356 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 357 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 358 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 359 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 360 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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