| No. |
Part Name |
Description |
Manufacturer |
| 331 |
SCT30N120 |
Silicon carbide Power MOSFET 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package |
ST Microelectronics |
| 332 |
SD41 |
25 Amp Schottky Barrier Rectifier 45 Volts |
Micro Commercial Components |
| 333 |
SOGC, 45 AND 46 SCHEMATICS |
Dual Inline Package, Small Outline Molded DIP, 16 or 20 Pins, Rugged, Molded Case Construction, Highly Stable, Automatic Surface Mount Compatible, Reduces Assembly Costs, Uniform Performance Characteristics |
Vishay |
| 334 |
SR1045A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 10 A. |
Bytes |
| 335 |
SR1045C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 10 A. |
Bytes |
| 336 |
SR1545A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 45 V. Max average forward rectified current 15.0 A. |
Chenyi Electronics |
| 337 |
SR1645A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 16 A. |
Bytes |
| 338 |
SR1645C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 16 A. |
Bytes |
| 339 |
SR3045A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 30 A. |
Bytes |
| 340 |
SR3045C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 30 A. |
Bytes |
| 341 |
SR845R |
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 45 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 342 |
SRF1545 |
Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 45 V. Max average forward rectified current 15.0 A. |
Chenyi Electronics |
| 343 |
SRF1545A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 45 V. Max average forward rectified current 15.0 A. |
Chenyi Electronics |
| 344 |
SST502 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 345 |
SST503 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 346 |
SST504 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 347 |
SST505 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 348 |
SST506 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 349 |
SST507 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 350 |
SST508 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 351 |
SST509 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 352 |
SST510 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 353 |
SST511 |
Current Regulator Diode-POV(min) 45 V |
Vishay |
| 354 |
STD45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 355 |
STF110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 45 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
| 356 |
STI45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package |
ST Microelectronics |
| 357 |
STK400-010 |
AF Power Amplifier (Split Power Supply) (45 W + 45 W min, THD = 0.4%) |
SANYO |
| 358 |
STK400-020 |
AF Power Amplifier (Split Power Supply) (45 W + 45 W min, THD = 0.4%) |
SANYO |
| 359 |
STK400-030 |
AF Power Amplifier (Split Power Supply) (45 W + 45 W min, THD = 0.4%) |
SANYO |
| 360 |
STK400-040 |
AF Power Amplifier (Split Power Supply) (45 W + 45 W min, THD = 0.4%) |
SANYO |
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