| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 332 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 333 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 334 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 335 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 336 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 337 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 338 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 339 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 340 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 341 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 342 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 343 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 344 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 345 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 346 |
1560 |
Marking for NE02103(C) part number, 03 NEC package |
NEC |
| 347 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 348 |
1620B |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 349 |
1620G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 350 |
1623G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 351 |
1623R |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 352 |
1623RO |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 353 |
1623Y |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 354 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 355 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 356 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 357 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 358 |
1641G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 359 |
1660 |
Marking for NE98203 part number, 03 NEC package |
NEC |
| 360 |
16MV4700WX |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
| | | |
