| No. |
Part Name |
Description |
Manufacturer |
| 331 |
29C021TI-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 332 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 333 |
29C021TI-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 334 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 335 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 336 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 337 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 338 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 339 |
29C021TM-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 340 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 341 |
29C021TM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 342 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 343 |
29F002 |
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
Advanced Micro Devices |
| 344 |
29F010 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory |
Advanced Micro Devices |
| 345 |
29F020 |
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
Advanced Micro Devices |
| 346 |
29F040 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory |
Advanced Micro Devices |
| 347 |
29F0408RPFB |
32 Megabit (4M x 8-bit) flash memory |
Maxwell Technologies |
| 348 |
29F0408RPFE |
32 Megabit (4M x 8-bit) flash memory |
Maxwell Technologies |
| 349 |
29F0408RPFI |
32 Megabit (4M x 8-bit) flash memory |
Maxwell Technologies |
| 350 |
29F0408RPFS |
32 Megabit (4M x 8-bit) flash memory |
Maxwell Technologies |
| 351 |
29F800 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only / Boot Sector Flash Memory |
Advanced Micro Devices |
| 352 |
2SD647A |
SILICON NPN TRIPLE DIFFUSED MEGA TYPE |
TOSHIBA |
| 353 |
2SD648A |
SILICON NPN TRIPLE DIFFUSED MEGA TYPE |
TOSHIBA |
| 354 |
2SD697A |
SILICON NPN TRIPLE DIFFUSED MEGA TYPE |
TOSHIBA |
| 355 |
39SF020 |
2 Megabit (256K x 8) Multi-Purpose Flash |
Silicon Storage Technology |
| 356 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 357 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
| 358 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
| 359 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
| 360 |
71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) |
IDT |
| | | |
