| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2-GD242 |
Germanium PNP Power Transistor |
RFT |
| 332 |
2-GD242A |
Germanium PNP Power Transistor |
RFT |
| 333 |
2-GD242B |
Germanium PNP Power Transistor |
RFT |
| 334 |
2-GD242C |
Germanium PNP Power Transistor |
RFT |
| 335 |
2-GD242D |
Germanium PNP Power Transistor |
RFT |
| 336 |
2-GD243 |
Germanium PNP Power Transistor |
RFT |
| 337 |
2-GD243A |
Germanium PNP Power Transistor |
RFT |
| 338 |
2-GD243B |
Germanium PNP Power Transistor |
RFT |
| 339 |
2-GD243C |
Germanium PNP Power Transistor |
RFT |
| 340 |
2-GD244 |
Germanium PNP Power Transistor |
RFT |
| 341 |
2-GD244A |
Germanium PNP Power Transistor |
RFT |
| 342 |
2-GD244B |
Germanium PNP Power Transistor |
RFT |
| 343 |
2-GD244C |
Germanium PNP Power Transistor |
RFT |
| 344 |
2-OC1016 |
Germanium junction PNP transistor |
TUNGSRAM |
| 345 |
2-OC1072 |
Germanium junction PNP transistor |
TUNGSRAM |
| 346 |
2-OC1074 |
Germanium junction PNP transistor |
TUNGSRAM |
| 347 |
2-OC26 |
Germanium PNP power transistor |
TUNGSRAM |
| 348 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 349 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 350 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 351 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 352 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 353 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 354 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 355 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 356 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 357 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 358 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 359 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 360 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
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