No. |
Part Name |
Description |
Manufacturer |
331 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
332 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
333 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
334 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
335 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
336 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
337 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
338 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
339 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
340 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
341 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
342 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
343 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
344 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
345 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
346 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
347 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
348 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
349 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
350 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
351 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
352 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
353 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
354 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
355 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
356 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
357 |
2N7000 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
358 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
359 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
360 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
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