No. |
Part Name |
Description |
Manufacturer |
331 |
BD237 |
N-P-N Silicon Epitaxial-BASE Transistor |
Mullard |
332 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
333 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
334 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
335 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
336 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
337 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
338 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
339 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
340 |
BD263 |
N-P-N Silicon Darlington Power Transistor |
Mullard |
341 |
BD263A |
N-P-N Silicon Darlington Power Transistor |
Mullard |
342 |
BD263B |
N-P-N Silicon Darlington Power Transistor |
Mullard |
343 |
BD433 |
N-P-N Silicon Power Transistor |
Mullard |
344 |
BD435 |
N-P-N Silicon Power Transistor |
Mullard |
345 |
BD437 |
N-P-N Silicon Power Transistor |
Mullard |
346 |
BD533 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. |
General Electric Solid State |
347 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
348 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
349 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
350 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
351 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
352 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
353 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
354 |
BD795 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
355 |
BD796 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
356 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
357 |
BD797 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
358 |
BD798 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
359 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
360 |
BD799 |
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Intersil |
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