| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 332 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 333 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 334 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
| 335 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 336 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
| 337 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
| 338 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
| 339 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 340 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 341 |
2N6667 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 342 |
2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 343 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 344 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 345 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 346 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
| 347 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
| 348 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 349 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 350 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 351 |
2SC5347 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications |
SANYO |
| 352 |
2SD118 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 353 |
2SD118-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 354 |
2SD118-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 355 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 356 |
2SD119 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 357 |
2SD119-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 358 |
2SD119-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 359 |
2SD119-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
| 360 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
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