No. |
Part Name |
Description |
Manufacturer |
331 |
IP4285CZ9-TBB |
ESD protection for high-speed interfaces |
NXP Semiconductors |
332 |
IP4286CZ6-TBF |
Integrated 4-channel ESD protection |
NXP Semiconductors |
333 |
IP4292CZ10-TBR |
ESD protection for ultra high-speed interfaces |
Nexperia |
334 |
IP4292CZ10-TBR |
ESD protection for ultra high-speed interfaces |
NXP Semiconductors |
335 |
IP4294CZ10-TBR |
ESD protection for ultra high-speed interfaces |
Nexperia |
336 |
IP4294CZ10-TBR |
ESD protection for ultra high-speed interfaces |
NXP Semiconductors |
337 |
K6L0908C2A-TB55 |
64Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
338 |
K6L0908C2A-TB70 |
64Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
339 |
K6T0808C1D-TB55 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
340 |
K6T0808C1D-TB70 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
341 |
K6T1008C2C-TB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
342 |
K6T1008C2C-TB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
343 |
K6T1008C2E-TB55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
344 |
K6T1008C2E-TB70 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
345 |
K6T4008U1C-TB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
346 |
K6T4008U1C-TB70 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
347 |
K6T4008U1C-TB85 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
348 |
K6T4008V1C-TB70 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
349 |
K6T4008V1C-TB85 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
350 |
K6T4016U3C-TB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
351 |
K6T4016U3C-TB70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
352 |
K6T4016U3C-TB85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
353 |
K6T4016V3C-TB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
354 |
K6T4016V3C-TB55 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
355 |
K6T4016V3C-TB70 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
356 |
K6T4016V3C-TB85 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
357 |
K6X1008C2D-TB55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
358 |
K6X1008C2D-TB70 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
359 |
K6X1008T2D-TB55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
360 |
K6X1008T2D-TB70 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| | | |