| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HIP0061 |
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array |
Intersil |
| 332 |
HIP0061AS1 |
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array |
Intersil |
| 333 |
HIP0061AS2 |
60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array |
Intersil |
| 334 |
IPD03N03LBG |
OptiMOS 2 Power-Transistor |
Infineon |
| 335 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 336 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 337 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 338 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 339 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 340 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 341 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 342 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 343 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 344 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
| 345 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 346 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 347 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 348 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 349 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 350 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 351 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 352 |
MCA230 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
| 353 |
MCA231 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
| 354 |
MCA235 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon darlington connected photo-transistor. |
General Electric Solid State |
| 355 |
MCT210 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
| 356 |
MCT4 |
Photo-Transistor Hermetic Optocouplers |
Skyworks Solutions |
| 357 |
MCT4R |
Photo-Transistor Hermetic Optocouplers |
Skyworks Solutions |
| 358 |
MMBT2222A |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 359 |
MMBT2907A |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 360 |
MMBT3904 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
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