No. |
Part Name |
Description |
Manufacturer |
331 |
EN29F800B-55T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. |
Eon Silicon Solution |
332 |
EN29F800B-55TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. |
Eon Silicon Solution |
333 |
EN29F800B-70T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
334 |
EN29F800B-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
335 |
EN29F800B-90T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 90ns. Bottom sector. |
Eon Silicon Solution |
336 |
EN29F800B-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 90ns. Bottom sector. |
Eon Silicon Solution |
337 |
FLC01-200B-TR |
FIRE LIGHTER CIRCUIT - (ASD) |
ST Microelectronics |
338 |
G1-200B-85-1.6 |
Processor Series Low Power Integrated x86 Solution |
National Semiconductor |
339 |
G1-300B-85-2.0 |
Processor Series Low Power Integrated x86 Solution |
National Semiconductor |
340 |
GL-200B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
341 |
GM-200B-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
342 |
GM-200B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
343 |
HCC4000B-4001B |
NOR GATE |
SGS Thomson Microelectronics |
344 |
HCF4000B-4001B |
NOR GATE |
SGS Thomson Microelectronics |
345 |
HCPL-7800B-300 |
High CMR Isolation Amplifiers |
Agilent (Hewlett-Packard) |
346 |
HCPL-7800B-300 |
High CMR isolation amplifier |
Agilent (Hewlett-Packard) |
347 |
HCPL-7800B-500 |
High CMR Isolation Amplifiers |
Agilent (Hewlett-Packard) |
348 |
HCPL-7800B-500 |
High CMR isolation amplifier |
Agilent (Hewlett-Packard) |
349 |
HY29LV800B-55 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
350 |
HY29LV800B-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
351 |
HY29LV800B-70 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
352 |
HY29LV800B-70I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
353 |
HY29LV800B-90 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
354 |
HY29LV800B-90I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
355 |
HY628100B-E |
128K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
356 |
HY628100B-I |
128K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
357 |
IS42S16400B-6T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
358 |
IS42S16400B-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
359 |
IS42S16400B-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
360 |
IS42S16400B-7TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
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