No. |
Part Name |
Description |
Manufacturer |
331 |
M28F201-150XK1TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
332 |
M28F201-150XK3R |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
333 |
M28F201-150XK3TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
334 |
M28F201-150XK6R |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
335 |
M28F201-150XK6TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
336 |
M28F201-150XN1R |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
337 |
M28F201-150XN1TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
338 |
M28F201-150XN3R |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
339 |
M28F201-150XN3TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
340 |
M28F201-150XN6R |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
341 |
M28F201-150XN6TR |
2 Mb 256K x 8/ Chip Erase FLASH MEMORY |
ST Microelectronics |
342 |
M902-01-156.2500 |
VCSO BASED GBE CLOCK GENERATOR |
Integrated Circuit Systems |
343 |
MQF160.01-1500/B |
Monolithic Crystal Filter, Selected customer types |
Vectron |
344 |
NS32C201-15 |
Timing Control Units |
National Semiconductor |
345 |
SB01-15C |
Schottky Barrier Diode, 150V, 0.1A, Low IR, Single CP |
ON Semiconductor |
346 |
SB01-15CP |
150V, 100mA Rectifier Shottky Barrier Diode |
SANYO |
347 |
SB01-15NP |
150V, 100mA Rectifier Shottky Barrier Diode |
SANYO |
348 |
SMV1401-15 |
250mW; silicon hyperabrupt tuning diode |
Knox Semiconductor Inc |
349 |
SMV2101-15 |
Capacitance:6.8pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
350 |
SN74ACT7801-15 |
-0.5 to 7 V, 40 MHz, 1024 x 18 asynchronous first-in first-out memory |
Texas Instruments |
351 |
SN74ACT7801-15FN |
1024 x 18 synchronous FIFO Memory |
Texas Instruments |
352 |
WD01-150 |
Wireless Controller Module with RF Transceiver |
Orbit Comunications |
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