| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2PA1015GR |
PNP general purpose transistor |
Philips |
| 332 |
2PA1015Y |
PNP general purpose transistor |
Philips |
| 333 |
2SA1015 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 334 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 335 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 336 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 337 |
2SA1015-GR |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 338 |
2SA1015-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 339 |
2SA1015-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 340 |
2SA1015GR |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 341 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 342 |
2SA1015Y |
400mW PNP silicon transistor |
Micro Electronics |
| 343 |
2SA2015 |
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications |
SANYO |
| 344 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 345 |
2SB1015 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 346 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 347 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 348 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 349 |
2SC4015 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 350 |
2SC5015 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 351 |
2SC5015-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 352 |
2SC5015-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 353 |
2SC5015-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 354 |
2SD1015 |
SILICON NPN LEC SYMMETRY TRANSISTOR |
SONY |
| 355 |
2SD2015 |
Silicon NPN Transistor |
Sanken |
| 356 |
2SD2015 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
| 357 |
2SK2015 |
Silicon N-Channel Power F-MOS |
Panasonic |
| 358 |
2V015 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 359 |
30150-33 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 360 |
30151-33 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
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