No. |
Part Name |
Description |
Manufacturer |
331 |
HY29F040AT-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
332 |
HY29F040AT-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
333 |
HY29F040AT-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
334 |
HY29F040AT-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
335 |
HY29F040AT-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
336 |
HY29F040AT-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
337 |
HY29F040AT-70 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
338 |
HY29F040AT-70E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
339 |
HY29F040AT-70I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
340 |
HY29F040AT-90 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 90ns |
Hynix Semiconductor |
341 |
HY29F040AT-90E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 90ns |
Hynix Semiconductor |
342 |
HY29F040AT-90I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 90ns |
Hynix Semiconductor |
343 |
I2040A-08SR |
30 MHz to 110 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
344 |
I2040A-08ST |
30 MHz to 110 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
345 |
I2040A-08TR |
30 MHz to 110 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
346 |
I2040A-08TT |
30 MHz to 110 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
347 |
JAN1N6040A |
Transient Voltage Suppressor |
Microsemi |
348 |
JANTX1N6040A |
Transient Voltage Suppressor |
Microsemi |
349 |
JANTXV1N6040A |
Transient Voltage Suppressor |
Microsemi |
350 |
KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory |
Samsung Electronic |
351 |
KM29W040AT |
512K x 8 bit NAND Flash Memory |
Samsung Electronic |
352 |
LM4040A |
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages |
MAXIM - Dallas Semiconductor |
353 |
LM4040A10 |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
354 |
LM4040A10IDBZR |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
355 |
LM4040A10IDBZRG4 |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy 3-SOT-23 -40 to 85 |
Texas Instruments |
356 |
LM4040A10IDBZT |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
357 |
LM4040A10IDCKR |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
358 |
LM4040A10IDCKT |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
359 |
LM4040A10ILP |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
360 |
LM4040A10ILPM |
10-V Precision Micropower Shunt Voltage Reference, 0.1% accuracy |
Texas Instruments |
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