| No. |
Part Name |
Description |
Manufacturer |
| 331 |
M27W800-150B6TR |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
| 332 |
M27W801-100B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
| 333 |
M27W801-120B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
| 334 |
M27W801-150B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
| 335 |
M27W801-200B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
| 336 |
M28F256-10B6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 337 |
M28F256-20B6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 338 |
M28F256-90B6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 339 |
M68AF031AL70B6E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 340 |
M68AF031AL70B6E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 341 |
M68AF031AL70B6F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 342 |
M68AF031AL70B6F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 343 |
M68AF031AL70B6T |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 344 |
M68AF031AL70B6T |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 345 |
M68AF031AM70B6E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 346 |
M68AF031AM70B6E |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 347 |
M68AF031AM70B6F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 348 |
M68AF031AM70B6F |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 349 |
M68AF031AM70B6T |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
| 350 |
M68AF031AM70B6T |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM |
ST Microelectronics |
| 351 |
M68AF127BL70B6T |
1Mbit 128K x8, 5V Asynchronous SRAM |
ST Microelectronics |
| 352 |
M68AF127BM70B6 |
1Mbit 128K x8, 5V Asynchronous SRAM |
ST Microelectronics |
| 353 |
M68AF127BM70B6T |
1Mbit 128K x8, 5V Asynchronous SRAM |
ST Microelectronics |
| 354 |
M68AF127BM70B6U |
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
| 355 |
ML920B6S |
InGaAs MQW - FP LASER DIODES |
Mitsubishi Electric Corporation |
| 356 |
NYE08-10B6 |
Protected TRIAC, 600 V, 0.8 A |
ON Semiconductor |
| 357 |
NYE08-10B6S |
Protected TRIAC, 600 V, 0.8 A |
ON Semiconductor |
| 358 |
P600B6A1 |
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) |
Wing Shing Computer Components |
| 359 |
SML20B67 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
| 360 |
SPC560B60L3 |
32-bit Power Architecture MCU for Automotive Body and Gateway Applications |
ST Microelectronics |
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