| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SA1626 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 332 |
2SA1627 |
PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching) |
NEC |
| 333 |
2SA2162 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 334 |
2SA2162G |
Silicon PNP epitaxial planar type |
Panasonic |
| 335 |
2SB1162 |
Silicon PNP Power Transistors TO-3PL package |
Savantic |
| 336 |
2SB1623 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 337 |
2SB1623A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 338 |
2SB1624 |
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) |
Sanken |
| 339 |
2SB1624 |
Silicon PNP Darlington Power Transistors TO-3PN package |
Savantic |
| 340 |
2SB1625 |
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) |
Sanken |
| 341 |
2SB1625 |
Silicon PNP Darlington Power Transistors TO-3PML package |
Savantic |
| 342 |
2SB1626 |
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) |
Sanken |
| 343 |
2SB1626 |
Silicon PNP Darlington Power Transistors TO-220F package |
Savantic |
| 344 |
2SB1628 |
Low-VCE(sat) bipolar transistor |
NEC |
| 345 |
2SB1629 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 346 |
2SC1162 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 347 |
2SC1162 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 348 |
2SC1162 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 349 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 350 |
2SC1621-L |
Silicon transistor |
NEC |
| 351 |
2SC1621-T1B |
Silicon transistor |
NEC |
| 352 |
2SC1621-T2B |
Silicon transistor |
NEC |
| 353 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 354 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 355 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 356 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 357 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 358 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 359 |
2SC1623-L |
Silicon transistor |
NEC |
| 360 |
2SC1623-L5 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
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