| No. |
Part Name |
Description |
Manufacturer |
| 331 |
ATF-10236 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 332 |
ATF-10236-STR |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 333 |
ATF-10236-TR1 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 334 |
ATF-10736 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 335 |
ATF-10736-STR |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 336 |
ATF-10736-TR1 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 337 |
ATF-10736-TRI |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 338 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 339 |
ATF10236 |
0.5?12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 340 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 341 |
BAT14-098 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 342 |
BAT14-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 343 |
BAT15-03W |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 344 |
BAT15-04 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 345 |
BAT15-04W |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz |
Infineon |
| 346 |
BAT15-05W |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz |
Infineon |
| 347 |
BAT15-099 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 348 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 349 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 350 |
BC122 green |
NPN Silicon Transistor in miniature case for AF applications |
Siemens |
| 351 |
BC202 green |
PNP Silicon Transistor in miniature case for AF-applications |
Siemens |
| 352 |
BCM5675 |
8-Port 192 Gbps HiGig+™ Switch Fabric |
Broadcom |
| 353 |
BF689K |
NPN 2 GHz wideband transistor |
Philips |
| 354 |
BF763 |
NPN 2 GHz wideband transistor |
Philips |
| 355 |
BFG10 |
NPN 2 GHz RF power transistor |
NXP Semiconductors |
| 356 |
BFG10 |
NPN 2 GHz RF power transistor |
Philips |
| 357 |
BFG10/X |
NPN 2 GHz RF power transistor |
Philips |
| 358 |
BFG10/X |
NPN 2 GHz RF power transistor |
Philips |
| 359 |
BFG11 |
NPN 2 GHz RF power transistor |
Philips |
| 360 |
BFG11/X |
NPN 2 GHz RF power transistor |
Philips |
| | | |
