| No. |
Part Name |
Description |
Manufacturer |
| 331 |
APL840N |
High quality voice synthesizer. 32 to 40 sec instant voice ROM. |
Aplus Integrated Circuits |
| 332 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 333 |
APPLICATION-NOTE |
150 Watt Linear Amplifier 2 to 28 MHz, 13.5 Volt D.C. |
TRW |
| 334 |
ATAR080 |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, V |
Atmel |
| 335 |
ATAR080-D |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, V |
Atmel |
| 336 |
ATAR090 |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, V |
Atmel |
| 337 |
ATAR090-C |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, V |
Atmel |
| 338 |
ATAR090-D |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, V |
Atmel |
| 339 |
ATAR510 |
4 KB ROM, 2 Timer, SSI, 34 I/O Lines, V |
Atmel |
| 340 |
ATAR890 |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, 64 Byte EEPROM, V |
Atmel |
| 341 |
ATAR890-C |
2 KB ROM, 2 Timer, SSI, 12 I/O Lines, 64 Byte EEPROM, V |
Atmel |
| 342 |
BC307-16 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 343 |
BCP |
22 x 22 Ta2 N Back-Contact on Silicon with Part Mark |
Vishay |
| 344 |
BD235 |
Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 345 |
BD237 |
Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 346 |
BD434 |
Trans GP BJT PNP 22V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 347 |
BD435 |
Trans GP BJT NPN 32V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 348 |
BD436 |
Trans GP BJT PNP 32V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 349 |
BD437 |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 350 |
BD677A |
Trans Darlington NPN 60V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 351 |
BD678A |
Trans Darlington PNP 60V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 352 |
BD679A |
Trans Darlington NPN 80V 4A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
| 353 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 354 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 355 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 356 |
BQ7716 |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 357 |
BQ771600 |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor |
Texas Instruments |
| 358 |
BQ771600DPJR |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON |
Texas Instruments |
| 359 |
BQ771600DPJT |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON |
Texas Instruments |
| 360 |
BQ771601 |
Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor |
Texas Instruments |
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