| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
| 332 |
2N2907 |
PNP small signal general purpose amplifier & switch . |
Fairchild Semiconductor |
| 333 |
2N2907 |
Switching PNP transistor |
FERRANTI |
| 334 |
2N2907 |
Silicon PNP low power transistor |
ICCE |
| 335 |
2N2907 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 336 |
2N2907 |
Silicon PNP Epitaxial Planar Switching Transistor |
IPRS Baneasa |
| 337 |
2N2907 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 338 |
2N2907 |
Switching transistor |
mble |
| 339 |
2N2907 |
Low frequency transistor |
mble |
| 340 |
2N2907 |
Switching transistor |
mble |
| 341 |
2N2907 |
Switching transistor |
mble |
| 342 |
2N2907 |
TO-18 Metal Can Transistors |
Micro Commercial Components |
| 343 |
2N2907 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 344 |
2N2907 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2222 NPN complementary |
Motorola |
| 345 |
2N2907 |
Silicon PNP Transistor |
Motorola |
| 346 |
2N2907 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 347 |
2N2907 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
| 348 |
2N2907 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 349 |
2N2907 |
PNP switching transistors |
Philips |
| 350 |
2N2907 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 351 |
2N2907 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 352 |
2N2907 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 353 |
2N2907 |
Silicon PNP transistor, general purpose |
SESCOSEM |
| 354 |
2N2907 |
GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
SGS Thomson Microelectronics |
| 355 |
2N2907 |
GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
SGS Thomson Microelectronics |
| 356 |
2N2907 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 357 |
2N2907 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 358 |
2N2907 |
PNP SILICON PLANAR TRANSISTORS |
Siemens |
| 359 |
2N2907 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 360 |
2N2907 |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS |
ST Microelectronics |
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