| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N6304 |
Diode Switching 50V 70A 2-Pin DO-5 |
New Jersey Semiconductor |
| 332 |
1N6304HCE |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 333 |
1N6304KCE |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 334 |
1N6304R |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 335 |
1PMT5304 |
Current Limiter Diode |
Microsemi |
| 336 |
1SS304 |
Switching diode |
NEC |
| 337 |
1SS304-T1 |
Switching diode |
NEC |
| 338 |
1SS304-T2 |
Switching diode |
NEC |
| 339 |
1SV304 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
| 340 |
2304 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 341 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
| 342 |
2304 |
CW Class C > 1 GHz |
Microsemi |
| 343 |
2304-2 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 344 |
232266193048 |
PTC Thermistors, Overload Protection For Telecommunication |
Vishay |
| 345 |
24H3040-2 |
50 Watt DC-DC Converters |
Power-One |
| 346 |
2722 169 03041 |
Microstrip Circulator |
Philips |
| 347 |
27C040 |
4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
| 348 |
2N1304 |
NPN Transistor |
Central Semiconductor |
| 349 |
2N1304 |
H.F. ALLOY NPN Transistor |
COSEM |
| 350 |
2N1304 |
Germanium High Frequency Transistor |
COSEM |
| 351 |
2N1304 |
NPN Transistor |
GPD Optoelectronic Devices |
| 352 |
2N1304 |
Switching transistor |
mble |
| 353 |
2N1304 |
Switching transistor |
mble |
| 354 |
2N1304 |
Germanium NPN Transistor |
Motorola |
| 355 |
2N1304 |
Germanium N-P-N low power transistor |
Mullard |
| 356 |
2N1304 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
| 357 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 358 |
2N2304 |
Silicon NPN Transistor |
Motorola |
| 359 |
2N3040 |
Silicon PNP Transistor |
Motorola |
| 360 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
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