No. |
Part Name |
Description |
Manufacturer |
331 |
IS61LV3216L-12TI |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
332 |
IS61LV3216L-15K |
15ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
333 |
IS61LV3216L-15K |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
334 |
IS61LV3216L-15KI |
15ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
335 |
IS61LV3216L-15KI |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
336 |
IS61LV3216L-15T |
15ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
337 |
IS61LV3216L-15T |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
338 |
IS61LV3216L-15TI |
15ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
339 |
IS61LV3216L-15TI |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
340 |
IS61LV3216L-20K |
20ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
341 |
IS61LV3216L-20K |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
342 |
IS61LV3216L-20KI |
20ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
343 |
IS61LV3216L-20KI |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
344 |
IS61LV3216L-20T |
20ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
345 |
IS61LV3216L-20T |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
346 |
IS61LV3216L-20TI |
20ns; 3.3V; 32K x 16 low voltage CMOS static RAM |
ICSI |
347 |
IS61LV3216L-20TI |
32K x 16 LOW VOLTAGE CMOS STATIC RAM |
Integrated Silicon Solution Inc |
348 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
349 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
350 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
351 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
352 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
353 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
354 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
355 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
356 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
357 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
358 |
K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
359 |
K6F3216T6M-F |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
360 |
K6F3216U6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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