| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HMC219MS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz |
Hittite Microwave Corporation |
| 332 |
HMC326MS8 |
GaAs InGaP HBT MMIC DRIVER AMPLIFIER/ 3.0 - 4.5 GHz |
Hittite Microwave Corporation |
| 333 |
HMC326MS8G |
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz |
Hittite Microwave Corporation |
| 334 |
HMC340LP5 |
GaAs MMIC SMT DOUBLE-BALANCED DUAL MIXER, 1.7 - 4.5 GHz |
Hittite Microwave Corporation |
| 335 |
IRF430 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 336 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 337 |
IRF431 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 338 |
IRF432 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 339 |
IRF433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 340 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 341 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 342 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 343 |
IRFS3207 |
V(dss): 75V; 3.6-4.5 mOhm; 180A; HEXFET power MOSFET. For high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits |
International Rectifier |
| 344 |
ISL89160 |
High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver |
Intersil |
| 345 |
ISL89161 |
High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver |
Intersil |
| 346 |
ISL89162 |
High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver |
Intersil |
| 347 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 348 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 349 |
K6T1008C2C-L |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 350 |
K6T1008C2C-P |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 351 |
L6260 |
4.5 � 5.5V DISK DRIVER SPINDLE & VCM, POWER & CONTROL COMBO�S |
SGS Thomson Microelectronics |
| 352 |
LH0082CD |
4.5 V to 12 V, optical communication receiver/amplifier |
National Semiconductor |
| 353 |
LM2403 |
Monolithic Triple 4.5 nS CRT Driver |
National Semiconductor |
| 354 |
LM2403T |
Monolithic Triple 4.5 CRT Driver [Life-time buy] |
National Semiconductor |
| 355 |
LM2408 |
Monolithic Triple 4.5 ns CRT Driver |
National Semiconductor |
| 356 |
LM2408T |
Monolithic Triple 4.5 ns CRT Driver |
National Semiconductor |
| 357 |
M3SW-2-50DR |
High Isolation Switches SPDT, DC to 4.5 GHz |
Mini-Circuits |
| 358 |
M3SWA-2-50DR |
High Isolation Switches SPDT, DC to 4.5 GHz |
Mini-Circuits |
| 359 |
M3SW_A-2-50DR |
High Isolation Switches SPDT, DC to 4.5 GHz |
Mini-Circuits |
| 360 |
M95128-BN1 |
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V |
SGS Thomson Microelectronics |
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