| No. |
Part Name |
Description |
Manufacturer |
| 331 |
AQW414A |
High voltage, photo MOS relay, isolation 3750V |
Global Components & Controls |
| 332 |
AQW414A |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 333 |
AQW414AX |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 334 |
AQW414AZ |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 335 |
AQW414EH |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Through hole terminal. |
Matsushita Electric Works(Nais) |
| 336 |
AQW414EHA |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
| 337 |
AQW414EHAX |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 338 |
AQW414EHAZ |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 339 |
AQW414S |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 340 |
AQY414 |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 341 |
AQY414EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 342 |
AQY414EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 343 |
AQY414EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 344 |
AQY414EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 345 |
AQY414S |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 346 |
AQY414SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 347 |
AQY414SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 348 |
ASS4148 |
Designed for mounting on small surface. |
Anachip |
| 349 |
ASS4148BD |
75 V, 150 mA, SMD switching diode |
Anachip |
| 350 |
ASS4148BD-0603 |
Designed for mounting on small surface. |
Anachip |
| 351 |
ASS4148BF |
75 V, 150 mA, SMD switching diode |
Anachip |
| 352 |
ASS4148BF-1005 |
Designed for mounting on small surface. |
Anachip |
| 353 |
AT-41400 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 354 |
AT-41400-GP4 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 355 |
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 356 |
AT-41411 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 357 |
AT-41411-BLK |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 358 |
AT-41411-TR1 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 359 |
AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 360 |
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
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