| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HMP8156CN |
NTSC/PAL Encoder |
Intersil |
| 332 |
IP4256CZ3-M |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
| 333 |
IP4256CZ5-W |
Single and dual-channel passive filter network with ESD protection |
Nexperia |
| 334 |
IP4256CZ5-W |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
| 335 |
IP4256CZ6-F |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
| 336 |
IP4856CX25 |
SD 3.0-compliant memory card integrated dual voltage level translator with EMI filter and ESD protection |
Nexperia |
| 337 |
JAN1N756C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 338 |
JAN1N756CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 339 |
JANTX1N756C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 340 |
JANTX1N756CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 341 |
JANTXV1N756C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 342 |
JANTXV1N756CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 343 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 344 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 345 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 346 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 347 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 348 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 349 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 350 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 351 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 352 |
KM62256C |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 353 |
KM62256C FAMILY |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 354 |
KM62256CL |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 355 |
KM62256CLG-4 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 356 |
KM62256CLG-4L |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 357 |
KM62256CLG-5 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 358 |
KM62256CLG-5 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 359 |
KM62256CLG-5L |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 360 |
KM62256CLG-5L |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
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