| No. |
Part Name |
Description |
Manufacturer |
| 331 |
RBQ20NS45AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 332 |
RBQ20NS65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 333 |
RBQ20NS65AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 334 |
RBQ20T45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 335 |
RBQ20T65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 336 |
RBQ30NS45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 337 |
RBQ30NS45AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 338 |
RBQ30NS65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 339 |
RBQ30NS65AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 340 |
RBQ30T45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 341 |
RBQ30T65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 342 |
RFL1N08 |
Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF |
New Jersey Semiconductor |
| 343 |
RFL1N08L |
Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF |
New Jersey Semiconductor |
| 344 |
RFL1N12L |
Trans MOSFET N-CH 120V 1A 3-Pin TO-205AF |
New Jersey Semiconductor |
| 345 |
RFL2N05 |
TRANS MOSFET N-CH 50V 2A 3-PIN TO-205AF |
New Jersey Semiconductor |
| 346 |
RFL2N06L |
Trans MOSFET N-CH 50V 2A 3-Pin TO-205AF |
New Jersey Semiconductor |
| 347 |
RN1905AFS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 348 |
RN2905AFS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 349 |
RN4985AFS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 350 |
S-29255AFE |
CMOS 2K/4K-bit serial E2PROM |
Epson Company |
| 351 |
S-29255AFE |
CMOS 2K/4K-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 352 |
S-29355AFE |
CMOS 2K/4K-bit serial E2PROM |
Epson Company |
| 353 |
S-29355AFE |
CMOS 2K/4K-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 354 |
S-8435AF-SK-T1 |
Step up switching regulator |
Epson Company |
| 355 |
S-8435AF-SK-T1 |
STEP-UP SWITCHING REGULATOR |
Seiko Instruments Inc |
| 356 |
S-8435AF-SK-T2 |
Step up switching regulator |
Epson Company |
| 357 |
S-8435AF-SK-T2 |
STEP-UP SWITCHING REGULATOR |
Seiko Instruments Inc |
| 358 |
S2005AF |
SILICON DIFFUSED POWER TRANSISTOR |
Wing Shing Computer Components |
| 359 |
S2055AF |
Silicon NPN Power Transistors TO-3PH package |
Savantic |
| 360 |
SA9105AFA |
THREE PHASE UNIDIRECTIONAL POWER/ENERGY METERING IC WITH PULSE OUTPUT |
Sames |
| | | |
