| No. |
Part Name |
Description |
Manufacturer |
| 331 |
GD80960JF-16 |
EMBEDDED 32-BIT MICROPROCESSOR |
Intel |
| 332 |
GD80960JF-25 |
EMBEDDED 32-BIT MICROPROCESSOR |
Intel |
| 333 |
GD80960JF-33 |
EMBEDDED 32-BIT MICROPROCESSOR |
Intel |
| 334 |
GD80960JT-100 |
EMBEDDED 32-BIT MICROPROCESSOR |
Intel |
| 335 |
GD80960JT-75 |
EMBEDDED 32-BIT MICROPROCESSOR |
Intel |
| 336 |
GLT41316-60J3 |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
etc |
| 337 |
GLT41316-60J4 |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
etc |
| 338 |
GLT4160L04-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 339 |
GLT4160L04E-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 340 |
GLT4160L04S-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 341 |
GLT4160L04SE-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 342 |
GLT4160L16-60J4 |
60ns; 1k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 343 |
GLT4160M04-60J3 |
60ns; 4K x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 344 |
GLT4160M04E-60J3 |
60ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 345 |
GLT44108-60J4 |
60ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 346 |
GP60J |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER |
Zowie Technology Corporation |
| 347 |
GRM21BR60J106 |
Up to 500 mA, High Efficiency Synchronous Step-Down DC-DC Converter |
ON Semiconductor |
| 348 |
GRM21BR60J226 |
Up to 500 mA, High Efficiency Synchronous Step-Down DC-DC Converter |
ON Semiconductor |
| 349 |
GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 350 |
GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications |
TOSHIBA |
| 351 |
GT60J323 |
IGBT for soft switching applications |
TOSHIBA |
| 352 |
GT60J323H |
Discrete IGBT |
TOSHIBA |
| 353 |
H02N60J |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 354 |
HI1260JCQ |
Triple 8-Bit, 35 MSPS, RGB, 3-Channel D/A Converter |
Intersil |
| 355 |
HM514260JP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 356 |
HM514260JP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 357 |
HM514260JP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 358 |
HSM160J |
Schottky Rectifier |
Microsemi |
| 359 |
HSM360J |
Schottky Rectifier |
Microsemi |
| 360 |
HSM560J |
Schottky Rectifier |
Microsemi |
| | | |
