| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HMN12816D-120 |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 332 |
HMN12816D-120I |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 333 |
HMN12816D-150 |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 334 |
HMN12816D-150I |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 335 |
HMN12816D-70 |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 336 |
HMN12816D-70I |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 337 |
HMN12816D-85 |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 338 |
HMN12816D-85I |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
etc |
| 339 |
IC61SF25636D-6.5B |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 340 |
IC61SF25636D-6.5BI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 341 |
IC61SF25636D-6.5Q |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 342 |
IC61SF25636D-6.5QI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 343 |
IC61SF25636D-7.5B |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 344 |
IC61SF25636D-7.5BI |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 345 |
IC61SF25636D-7.5TQ |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 346 |
IC61SF25636D-7.5TQI |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 347 |
IC61SF25636D-8.5B |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 348 |
IC61SF25636D-8.5BI |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 349 |
IC61SF25636D-8.5TQ |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 350 |
IC61SF25636D-8.5TQI |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 351 |
IC61SF25636D-9.5B |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 352 |
IC61SF25636D-9.5BI |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 353 |
IC61SF25636D-9.5TQ |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 354 |
IC61SF25636D-9.5TQI |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 355 |
IRGP4266D-EPBF |
650V Low VCEon Trench Co-Pack IGBT in a TO-247AC package. |
International Rectifier |
| 356 |
IS61LF25636D-10B |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 357 |
IS61LF25636D-10TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 358 |
IS61LF25636D-10TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 359 |
IS61LF25636D-8.5B |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 360 |
IS61LF25636D-8.5TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| | | |
