| No. |
Part Name |
Description |
Manufacturer |
| 331 |
MTD6N10 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola |
| 332 |
MTD6N10E |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola |
| 333 |
MTD6N10E |
6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100 |
ON Semiconductor |
| 334 |
MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 335 |
MTD6N15 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
Motorola |
| 336 |
MTD6N15 |
TMOS Power 150V .3R |
ON Semiconductor |
| 337 |
MTD6N15-D |
Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 338 |
MTD6N15T4 |
TMOS Power 150V .3R |
ON Semiconductor |
| 339 |
MTD6N15T4G |
TMOS Power 150V .3R |
ON Semiconductor |
| 340 |
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 341 |
MTV6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 342 |
MTV6N100E |
6 Amp D3PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
| 343 |
MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 344 |
MTW26N15E |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM |
Motorola |
| 345 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 346 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 347 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 348 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 349 |
NB6N11S |
3.3 V 1:2 AnyLevel Input to LVDS Fanout Buffer / Translator |
ON Semiconductor |
| 350 |
NB6N14S |
3.3 V 1:4 AnyLevel Input to LVDS Fanout Buffer / Translator |
ON Semiconductor |
| 351 |
NM27C256N100 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 352 |
NM27C256N120 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 353 |
NM27C256N150 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 354 |
OM6N100NK |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 355 |
OM6N100NK |
1000V N-channel MOSFET |
Omnirel |
| 356 |
OM6N100SA |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package |
International Rectifier |
| 357 |
OM6N100SA |
1000V; up to 6 Amp, N-channel MOSFET |
Omnirel |
| 358 |
OM6N100SW |
1000V Single N-Channel Hi-Rel MOSFET in a D3 package |
International Rectifier |
| 359 |
PHD6N10E |
PowerMOS transistor |
Philips |
| 360 |
PHP26N10E |
PowerMOS transistor |
Philips |
| | | |
