| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HM514260ATT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 332 |
HM514260AZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 333 |
HM514260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 334 |
HM514260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 335 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 336 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 337 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 338 |
HM514260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 339 |
HM514260DJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 340 |
HM514260DLJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 341 |
HM514260JP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 342 |
HM514260LJP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 343 |
HM514260LTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 344 |
HM514260LZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 345 |
HM514260TT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 346 |
HM514260ZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 347 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 348 |
HM514400ALJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 349 |
HM514400ALR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 350 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 351 |
HM514400ALS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 352 |
HM514400ALT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 353 |
HM514400ALTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 354 |
HM514400ALTZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 355 |
HM514400ALZ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 356 |
HM514400AR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 357 |
HM514400ARR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 358 |
HM514400AS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 359 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 360 |
HM514400ASLR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
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