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Datasheets for 8 W

Datasheets found :: 479
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
No. Part Name Description Manufacturer
331 TC51832SPL-85 85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM TOSHIBA
332 TC54256AF 32768 word x 8-bit CMOC one time programmable read only memory, 200ns TOSHIBA
333 TC54256AP 32768 word x 8-bit CMOC one time programmable read only memory, 200ns TOSHIBA
334 TC5516 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
335 TC5516AF 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
336 TC5516AF-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
337 TC5516AFL 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
338 TC5516AFL-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
339 TC5516AP 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
340 TC5516AP-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
341 TC5516APL 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
342 TC5516APL-2 2,048 WORD X 8 BIT CMOS STATIC RAM TOSHIBA
343 TC55257BFL SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
344 TC55257BFL-10 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
345 TC55257BFL-10L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
346 TC55257BFL-85 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
347 TC55257BFL-85L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
348 TC55257BFTL SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
349 TC55257BFTL-10 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
350 TC55257BFTL-10L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
351 TC55257BFTL-85 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
352 TC55257BFTL-85L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
353 TC55257BPL SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
354 TC55257BPL-10 SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
355 TC55257BPL-10L SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM TOSHIBA
356 TC55257BPL-85L 85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM TOSHIBA
357 TC55257BSPL-10L 100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM TOSHIBA
358 TC55257BSPL-85L 85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM TOSHIBA
359 TC55257BTRL-10L 100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM TOSHIBA
360 TC55257BTRL-85L 85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM TOSHIBA


Datasheets found :: 479
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