No. |
Part Name |
Description |
Manufacturer |
331 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
332 |
TC54256AF |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
333 |
TC54256AP |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
334 |
TC5516 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
335 |
TC5516AF |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
336 |
TC5516AF-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
337 |
TC5516AFL |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
338 |
TC5516AFL-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
339 |
TC5516AP |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
340 |
TC5516AP-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
341 |
TC5516APL |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
342 |
TC5516APL-2 |
2,048 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
343 |
TC55257BFL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
344 |
TC55257BFL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
345 |
TC55257BFL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
346 |
TC55257BFL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
347 |
TC55257BFL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
348 |
TC55257BFTL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
349 |
TC55257BFTL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
350 |
TC55257BFTL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
351 |
TC55257BFTL-85 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
352 |
TC55257BFTL-85L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
353 |
TC55257BPL |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
354 |
TC55257BPL-10 |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
355 |
TC55257BPL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
356 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
357 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
358 |
TC55257BSPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
359 |
TC55257BTRL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
360 |
TC55257BTRL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
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