| No. |
Part Name |
Description |
Manufacturer |
| 331 |
GVT71512D18T-5 |
512K x 18 pipelined SRAM, 200MHz |
Cypress |
| 332 |
GVT71512D18T-6 |
512K x 18 pipelined SRAM, 166MHz |
Cypress |
| 333 |
GVT71512D18T-6.7 |
512K x 18 pipelined SRAM, 150MHz |
Cypress |
| 334 |
HM628128T-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
| 335 |
HM628128T-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
| 336 |
HM628128T-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
| 337 |
HM628128T-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
| 338 |
IC61SF51218T-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 339 |
IC61SF51218T-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 340 |
IC61SF51218T-7.5TQ |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 341 |
IC61SF51218T-7.5TQI |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 342 |
IC61SF51218T-8.5TQ |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 343 |
IC61SF51218T-8.5TQI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 344 |
IC61SF51218T-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 345 |
IC61SF51218T-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 346 |
IDT23S08T-1DC |
3.3V Zero Delay Clock Multiplier, Spread Spectrum Compatible |
IDT |
| 347 |
IDT23S08T-1DC8 |
3.3V Zero Delay Clock Multiplier, Spread Spectrum Compatible |
IDT |
| 348 |
IS61LF51218T-10TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 349 |
IS61LF51218T-10TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 350 |
IS61LF51218T-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 351 |
IS61LF51218T-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 352 |
IS61LF51218T-9TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 353 |
IS61LF51218T-9TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 354 |
IS61LPD51218T-133TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 355 |
IS61LPD51218T-133TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 356 |
IS61LPD51218T-150TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 357 |
IS61LPD51218T-5TQ |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 358 |
IS61LPD51218T-5TQI |
512K x 18 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 359 |
IS61LPS51218T-133TQ |
512K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 360 |
IS61LPS51218T-133TQI |
512K x 18 synchronous pipeline, single-cycle deselect static RAM |
Integrated Silicon Solution Inc |
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