| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N2906 |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 332 |
2N2906A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 333 |
2N2907 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 334 |
2N2907A |
Type 2N2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 335 |
2N2907AUB |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 336 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 337 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 338 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 339 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 340 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 341 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 342 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 343 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 344 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 345 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 346 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 347 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 348 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 349 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 350 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 351 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 352 |
2N3227 |
Chip Type 2C2369A Geometry 0005 Polarity NPN |
Semicoa Semiconductor |
| 353 |
2N3485 |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 354 |
2N3485A |
Chip Type 2C2904A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 355 |
2N3486 |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 356 |
2N3486A |
Chip Type 2C2907A Geometry 0600 Polarity PNP |
Semicoa Semiconductor |
| 357 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 358 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 359 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 360 |
2N4449 |
Chip Type 2C2369A Geometry 0005 Polarity NPN |
Semicoa Semiconductor |
| | | |
